Electro-optical device, wiring substrate, and electronic apparatus

ABSTRACT

The invention provides an electro-optical device in which a voltage drop due to the wiring resistance of a cathode is reduced and therefore steady image signals are transmitted such that erroneous image display, such as low contrast, is reduced or prevented. The invention also provides an electronic apparatus including such an electro-optical device. An electro-optical device includes red, green, and blue luminescent power-supply lines to apply currents to light-emitting elements arranged in an actual display region in a matrix; and a cathode line disposed between the light-emitting elements and a cathode. The cathode line has a width larger than a width of red, green, and blue luminescent power-supply lines.

This is a Continuation of application Ser. No. 10/615,849 filed Jul. 10,2003. The entire disclosure of the prior application is herebyincorporated by reference herein in its entirety.

BACKGROUND OF THE INVENTION

1. Field of Invention

The present invention relates to electro-optical devices and electronicapparatuses. The present invention particularly relates to anelectro-optical device including current-driven electro-opticalelements, such as organic electroluminescent elements. The inventionalso relates to an electronic apparatus including such anelectro-optical device.

2. Description of Related Art

Related art electroluminescent devices that include pixels (discussedbelow) can be used in the next-generation of displays, as disclosed in,for example, International Publication No. WO 98/36407. These pixelseach include corresponding light-emitting layers, each disposed betweencorresponding pixel electrodes and a counter electrode, to emit lightwhen a current is applied between the pixel electrodes and the counterelectrode.

In such electroluminescent devices in which light is emitted by applyinga current, since the luminescence depends on the amount of current, thestructure and layout of wiring to apply currents or driving voltages topixels must be enhanced or optimized.

SUMMARY OF THE INVENTION

The present invention addresses the above and/or other situations, andprovides an electro-optical device in which steady currents or drivingvoltages can be applied to pixels and also provide an electronicapparatus including such an electro-optical device.

In order to address or solve the above, an electro-optical device of thepresent invention includes a plurality of first electrodes disposed inan effective region on a substrate; a second electrode acting as acommon electrode for a plurality of the first electrodes; a plurality ofelectro-optical elements that are each disposed between the secondelectrode and the corresponding first electrodes; first wiring lines toapply power-supply voltages to the first electrodes; and a second wiringline, connected to the second electrode, lying between the effectiveregion and at least one of a plurality of sides of the substrate. Thearea of the second wiring line disposed on the substrate is larger thanthe total area of parts of the first wiring lines, the parts beingdisposed outside the effective region on the substrate.

According to the above electro-optical device, since the second wiringline, connected to the second electrode acting as a common electrode fora plurality of the first electrodes, lying on the substrate has a largearea, the wiring resistance can be reduced, thereby applying steadycurrents to a plurality of the electro-optical elements.

If the area of a region located outside the effective region must bereduced or minimized, the area of the second wiring line disposed on thesubstrate is preferably larger than the total area of parts of the firstwiring lines to apply power-supply voltages to the first electrodes, theparts being disposed outside the effective region on the substrate.

In the above electro-optical device, the term “effective region” isdefined as a region having electro-optical functions or a region todisplay an image.

In the above electro-optical device, the second wiring line preferablyhas a portion having a width larger than that of the first wiring lines.

In the above electro-optical device, the width of the entire secondwiring line may be larger than that of the first wiring lines.

In the above electro-optical device, a plurality of the electro-opticalelements may each be placed between the second electrode and thecorresponding first electrodes, and may each include correspondinglight-emitting layers that emit light when currents are applied betweenthe second electrode and the corresponding first electrodes. A pluralityof the electro-optical elements may include a plurality of types ofelements classified depending on the color of light emitted from thelight-emitting layers, and the first wiring lines may be arrangeddepending on the color of emitted light.

In the above electro-optical device, the width of the second wiring linedisposed outside the effective region may be larger than the width ofpart of one of the first wiring lines arranged depending on the type ofthe electro-optical elements, the part being disposed outside theeffective region, the one being the widest of the first wiring lines.

In the above electro-optical device, the substrate may have a dummyregion disposed between the effective region and at least one of aplurality of sides of the substrate, and the first wiring lines and thesecond wiring line may be arranged between the dummy region and at leastone of a plurality of sides of the substrate.

In the above electro-optical device, the second electrode may cover atleast the effective region and the dummy region.

In the above electro-optical device, a connection between the secondwiring line and the second electrode preferably lies between theeffective region and at least three of a plurality of sides of thesubstrate.

As described above, since the connection between the second wiring lineand the second electrode has a large area, problems, such as unstablecurrent, can be reduced or eliminated.

In the above electro-optical device, a plurality of the first electrodesare preferably each included in corresponding pixel electrodes arrangedin the effective region and each include a plurality of control lines totransmit signals to control the pixel electrodes, and a plurality of thecontrol lines are preferably arranged such that each control line and atleast one of the first wiring lines and the second wiring line do notcross on the substrate.

When the control line and each first wiring line or the second wiringline cross, a parasitic capacitance is formed between the control lineand the first wiring line or between the control line and the secondwiring line. Thereby, the following phenomena are caused in some cases:signals transmitted to the control lines are delayed and dull signalsare transmitted. However, since the control lines are arranged such thateach control line and the first wiring line or the second wiring line donot cross, problems including the delay in transmitting signals to thecontrol lines and such dull signals can be reduced or eliminated.

In the above electro-optical device, the control lines may each includecorresponding scanning lines to transmit scanning signals to thecorresponding pixel electrodes and also each include corresponding datalines to transmit data signals to the corresponding pixel electrodes.

In the above electro-optical device, the electro-optical elements mayeach include corresponding hole injection/transport layers andcorresponding light-emitting layers containing an organicelectroluminescent material, each hole injection/transport layer andlight-emitting layer being stacked.

An electronic apparatus of the present invention includes the aboveelectro-optical device.

A wiring substrate, used for electro-optical devices each includingelectro-optical elements each disposed between a plurality ofcorresponding first electrodes and a second electrode acting as a commonelectrode for the first electrodes, includes a plurality of firstelectrodes disposed on a substrate, first wiring lines to applypower-supply voltages to the first electrodes, and a second wiring lineconnected to the second electrode. The second electrode is disposedoutside an effective region having the first electrodes therein, and thearea of the second wiring line disposed on the substrate is larger thanthe total area of parts of the first wiring lines, the parts beingdisposed outside the effective region on the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic showing a wiring structure of an electro-opticaldevice according to an exemplary embodiment of the present invention;

FIG. 2 is a schematic plan view showing the electro-optical deviceaccording to the exemplary embodiment of the present invention;

FIG. 3 is a sectional view taken along plane A-A′ of FIG. 2;

FIG. 4 is a sectional view taken along plane B-B′ of FIG. 2;

FIG. 5 is a sectional view showing a main part of a pixel electrodecluster region 11 a;

FIGS. 6( a)-6(d) are schematics showing steps of manufacturing theelectro-optical device according to the exemplary embodiment of thepresent invention;

FIGS. 7( a)-7(c) are schematics showing steps of manufacturing theelectro-optical device according to the exemplary embodiment of thepresent invention;

FIGS. 8( a)-8(c) are schematics showing steps of manufacturing theelectro-optical device according to the exemplary embodiment of thepresent invention;

FIGS. 9( a)-9(c) are schematics showing steps of manufacturing theelectro-optical device according to the exemplary embodiment of thepresent invention;

FIG. 10 is a schematic perspective view showing an exemplary electronicapparatus including an electro-optical device according to an exemplaryembodiment of the present invention;

FIG. 11 is a schematic perspective view showing a mobile phoneillustrating another exemplary electronic apparatus.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

An electro-optical device and electronic apparatus according to thepresent invention is described in detail below with reference to theattached drawings. In the following drawings, in order to show eachlayer and member in the drawings on a recognizable scale, differentscales are used for showing the layers and members. FIG. 1 is aschematic showing a wiring structure of an electro-optical deviceaccording to an exemplary embodiment of the present invention.

The electro-optical device 1 shown in FIG. 1 is an active matrix typeorganic EL device including thin-film transistors (hereinafter “TFTs”)functioning as switching elements. As shown in FIG. 1, theelectro-optical device 1 of this exemplary embodiment includes aplurality of scanning lines 101, signal lines 102 extending such thateach signal lines 102 and each scanning line 101 cross, and a pluralityof luminescent power-supply lines 103 extending in parallel to thesignal lines 102, and has pixel regions A each disposed in thevicinities of corresponding intersections of the scanning lines 101 andsignal lines 102. The scanning lines 101 and signal lines 102 are hereindefined as parts of control lines.

The signal lines 102 are connected to a data driving circuit 104including a shift register, a level shifter, video lines, and analogueswitches. The signal lines 102 are also connected to an inspectioncircuit 106 including TFTs. The scanning lines 101 are connected toscanning driving circuits 105 another shift register and level shifter.

A pixel circuit including the following components is disposed in eachpixel region A: a switching TFT 112, a capacitor Cap, a current TFT 123,a pixel electrode (first electrode) 111, a light-emitting layer 110, anda cathode (second electrode) 12. The switching TFT 112 includes a gateelectrode connected to each scanning line 101 and is turned on or offdepending on scanning signals transmitted from the scanning line 101.The capacitor Cap stores a pixel signal transmitted via the switchingTFT 112 from each signal line 102.

The current TFT 123 includes a gate electrode connected to the switchingTFT 112 and the capacitor Cap. The pixel signal stored in the capacitorCap is transmitted to this gate electrode. The pixel electrode 111 isconnected to the current TFT 123, whereby a driving current is appliedto the pixel electrode 111 from each luminescent power-supply line 103when the pixel electrode 111 is electrically connected to theluminescent power-supply line 103 with the current TFT 123 disposedtherebetween. The light-emitting layer 110 is disposed between the pixelelectrode 111 and the cathode 12.

The light-emitting layers 110 include three types of layers: redlight-emitting layers 110R to emit red light, green light-emittinglayers 110G to emit green light, and blue light-emitting layers 110B toemit blue light. The red, green, and blue light-emitting layers 110R,110G, and 110B are arranged in a striped pattern. Red, green, and blueluminescent power-supply lines 103R, 103G, and 103B are connected to thered, green, and blue light-emitting layers 110R, 110G, and 110B,respectively, with the current TFTs 123 each disposed therebetween andalso connected to a luminescent power-supply circuit 132. Since thedriving potentials of the red, green, and blue light-emitting layers110R, 110G, and 110B are different from each other, the red, green, andblue luminescent power-supply lines 103R, 103G, and 103B are arrangeddepending on color.

In the electro-optical device 1 of the present invention, firstcapacitors C₁ are each disposed between the cathode 12 and each of thered, green, and blue luminescent power-supply lines 103R, 103G, and103B. When the electro-optical device 1 is turned on, charges are storedin the first capacitors C₁. When the potentials of driving currentsflowing in the luminescent power-supply lines 103 fluctuate during theoperation of the electro-optical device 1, the stored charges aresupplied to the luminescent power-supply lines 103, thereby reducing thepotential fluctuation of the driving currents. Thus, the electro-opticaldevice 1 can normally display an image.

In the electro-optical device 1, when scanning signals are transmittedto the switching TFTs 112 from the scanning lines 101 and thereby theswitching TFTs 112 are turned on, the potentials of the signal lines 102are stored in the capacitors Cap. The current TFTs 123 are then turnedon or off depending on the potentials stored in the capacitors Cap.Driving currents are applied to the pixel electrodes 111 via channels ofthe current TFTs 123 from the red, green, and blue luminescentpower-supply lines 103R, 103G, and 103B, and currents are applied to thecathode 12 via the red, green, and blue light-emitting layers 110R,110G, and 110B. In this operation, light is emitted from thelight-emitting layers 110. The quantity of the emitted light depends onthe quantity of currents flowing in the light-emitting layers 110.

A particular configuration of the electro-optical device 1 according tothis exemplary embodiment is described below with reference to FIGS. 2to 4. FIG. 2 is a schematic plan view showing the electro-optical device1, FIG. 3 is a sectional view taken along plane A-A′ of FIG. 2, and FIG.4 is a sectional view taken along plane B-B′ of FIG. 2. As shown in FIG.2, the electro-optical device 1 includes a substrate 2; a pixelelectrode cluster region (not shown); the luminescent power-supply lines103 (103R, 103G, and 103B); and display pixel section 3 (the sectionsurrounded by the dotted-chain line in the figure).

The substrate 2 includes, for example, a transparent material, such asglass. The pixel electrode cluster region contains pixel electrodes (notshown) connected to the current TFTs 123 and arranged on the substrate 2in a matrix. As shown in FIG. 2, the luminescent power-supply lines 103(103R, 103G, and 103B) are arranged around the pixel electrode clusterregion and each connected to the corresponding pixel electrodes. Thedisplay pixel section 3 is disposed above at least the pixel electrodecluster region and has substantially a rectangular shape when viewedfrom above. The display pixel section 3 is partitioned into an actualdisplay region 4 (the region surrounded by the two-dot chain line in thefigure) placed at the center area and a dummy region 5 (the regionbetween the dotted line and the two-dot line) placed around the actualdisplay region 4 (this region may be referred to as an effective displayregion).

In the figure, the scanning driving circuits 105 described above aredisposed at both sides of the actual display region 4. The scanningdriving circuits 105 are placed on the back of the dummy region 5 (thatis, on the side close to the substrate 2). Furthermore, scanningline-driving circuit control signal lines 105 a and scanningline-driving circuit power-supply lines 105 b connected to the scanningdriving circuits 105 are placed on the back of the dummy region 5. Theinspection circuit 106 is disposed above the actual display region 4.The inspection circuit 106 placed on the back of the dummy region 5(that is, on the side close to the substrate 2). The quality and defectsof the electro-optical device 1 can be checked using the inspectioncircuit 106 during the manufacture thereof or at the time of thedelivery thereof.

As shown in FIG. 2, the red, green, and blue luminescent power-supplylines 103R, 103G, and 103B are arranged around the dummy region 5. Thered, green, and blue luminescent power-supply lines 103R, 103G, and 103Bextend from the back of the substrate 2, extend upward along thescanning line-driving circuit power-supply lines 105 b, bend at thepositions that the scanning line-driving circuit power-supply lines 105b terminate, and further extend along the outside of the dummy region 5such that the red, green, and blue luminescent power-supply lines 103R,103G, and 103B are connected to the pixel electrodes (not shown)disposed in the actual display region 4. A first cathode line 12 aconnected to the cathode 12 is disposed on the substrate 2. The firstcathode line 12a has substantially a “C” shape when viewed from aboveand are arranged such that the cathode 12 surrounds the red, green, andblue luminescent power-supply lines 103R, 103G, and 103B.

The actual display region 4 and the dummy region 5 are surrounded by thefirst cathode line 12 a and the red, green, and blue luminescentpower-supply lines 103R, 103G, and 103B. A plurality of the scanninglines 101 shown in FIG. 1 are arranged in the actual display region 4and the signal lines 102 extend such that each signal line 102 andscanning line 101 cross. That is, the scanning lines 101 and the signallines 102 are arranged in an area on the substrate 2 such that the areais surrounded by the first cathode line 12 a and the red, green, andblue luminescent power-supply lines 103R, 103G, and 103B on three sides.

The first cathode line 12 a and the red, green, and blue luminescentpower-supply lines 103R, 103G, and 103B, which are characteristic of thepresent invention, are described below. As shown in FIG. 1, currentsapplied from the red, green, and blue luminescent power-supply lines103R, 103G, and 103B to the light-emitting layers 110 flow into thecathode 12 (first cathode line 12 a). Thus, an increase in resistance ofthe first cathode line 12 a, of which the width is limited, causes aserious voltage drop. Therefore, the voltage of the first cathode line12 a fluctuates depending on the position, thereby causing wrong imagedisplay such as low contrast.

In this exemplary embodiment, in order to prevent such a problem, thefirst cathode line 12 a has an area larger than that of each of the red,green, and blue luminescent power-supply lines 103R, 103G, and 103B. Thefirst cathode line 12 a preferably has a large area in order to obtain alow resistance. However, the area of the first cathode line 12 a islimited to a certain extent because various wiring lines are arranged onthe substrate 2, as shown in FIG. 2.

On the assumption that the first cathode line 12 a has the sameresistance per unit length as that of each of the red, green, and blueluminescent power-supply lines 103R, 103G, and 103B, the followingconfiguration has been designed. At least part of the first cathode line12 a has a width larger than that of each of the red, green, and blueluminescent power-supply lines 103R, 103G, and 103B and therefore thefirst cathode line 12 a has an area larger than that of each of the red,green, and blue luminescent power-supply lines 103R, 103G, and 103B. Inthe configuration shown in FIG. 2, the entire first cathode line 12 ahas a width larger than that of each of the red, green, and blueluminescent power-supply lines 103R, 103G, and 103B.

Assuming that the same voltage is applied to the red, green, and blueluminescent power-supply lines 103R, 103G, and 103B; the red, green, andblue luminescent power-supply lines 103R, 103G, and 103B have the samewidth; the same current flows in the red, green, and blue luminescentpower-supply lines 103R, 103G, and 103B; and all the light-emittinglayers 110 have the same electric properties. The total of the currentsflowing in the light-emitting layers 110 and the red, green, and blueluminescent power-supply lines 103R, 103G, and 103B flows into the firstcathode line 12 a. Thus, in order to cause the voltage drop in the firstcathode line 12 a to remain within the same order of magnitude as thatof the red, green, and blue luminescent power-supply lines 103R, 103G,and 103B, the first cathode line 12 a preferably has a width larger thanthe total of the width of the red, green, and blue luminescentpower-supply lines 103R, 103G, and 103B.

However, in the electro-optical device 1 of this exemplary embodiment,the light-emitting layers 110 have different properties depending oncolor; different voltages are applied to the red, green, and blueluminescent power-supply lines 103R, 103G, and 103B depending on color;and therefore different currents flow. Therefore, in this exemplaryembodiment, the first cathode line 12 a preferably has a width largerthan that of one luminescent power-supply line in which the largestcurrent flows (that is, the largest voltage drop is caused). The otherluminescent power-supply lines have a smaller width because smallervoltages are applied and therefore smaller currents flow, as comparedwith this line.

Thus, the first cathode line 12 a has a width larger than that of thered, green, and blue luminescent power-supply lines 103R, 103G, and103B. The first cathode line 12 a and the red, green, and blueluminescent power-supply lines 103R, 103G, and 103B are designed in sucha manner. In the configuration shown in FIG. 2, the entire first cathodeline 12 a has a width larger than that of the red, green, and blueluminescent power-supply lines 103R, 103G, and 103B. However, at leastpart of the first cathode line 12 a may have a width larger than that ofthe red, green, and blue luminescent power-supply lines 103R, 103G, and103B depending on the arrangement of the lines.

As shown in FIG. 2, a polyimide tape 130 is provided at one end of thesubstrate 2 and a control integrated circuit (control IC) 131 is mountedon the polyimide tape 130. The control IC 131 includes the data-sidedriving circuit 104, a cathodic power-supply circuit 131, and theluminescent power-supply circuit 132.

As shown in FIGS. 3 and 4, the substrate 2 has a circuit section 11thereon and the display pixel section 3 is disposed on the circuitsection 11. The substrate 2 includes a sealing member 13 surrounding thedisplay pixel section 3 and further includes a sealing substrate 14disposed above the display pixel section 3. The sealing substrate 14 andthe substrate 2 are joined each other with the sealing member 13disposed therebetween. The sealing substrate 14 includes glass, metal, aresin, or the like. An adsorbent 15 is disposed on the back of thesealing substrate 14 in an adhered manner and adsorbs moisture and/oroxygen leaking in a space between the display pixel section 3 and thesealing substrate 14. A getter may be used instead of the adsorbent 15.The sealing member 13 includes, for example, a thermosetting resin or anultraviolet-setting resin, and preferably includes an epoxy resin, whichis one of thermosetting resins, in particular.

A pixel electrode cluster region 11 a is disposed at the center of thecircuit section 11. The pixel electrode cluster region 11 a contains thecurrent TFTs 123 and the pixel electrodes 111 connected to the currentTFTs 123. The current TFTs 123 are placed below a base-protecting layer281, a second interlayer-insulating layer 283, and a firstinterlayer-insulating layer 284 arranged on the substrate 2 in thatorder. The pixel electrodes 111 are disposed on the firstinterlayer-insulating layer 284. Each current TFT 123 has a sourceelectrode disposed on the second interlayer-insulating layer 283 and thesource electrode is connected to each luminescent power-supply line 103(103R, 103G, or 103B). The capacitors Cap and the switching TFTs 112 aredisposed in the circuit section 11, which are not shown in FIGS. 3 and4. The signal lines 102 are also not shown in FIGS. 3 and 4.Furthermore, the switching TFTs 112 and the current TFTs 123 are notshown in FIG. 4.

As shown in FIG. 3, the scanning driving circuits 105 are disposed atboth sides of the pixel electrode cluster region 11 a. As shown in FIG.4, the inspection circuit 106 is disposed at the left side of the pixelelectrode cluster region 11 a. Each scanning driving circuit 105includes first TFTs 105 c, which are of n or p-channel type and arecomponents of an inverter included in the shift register. The first TFTs105 c have the same configuration as that of the current TFTs 123 exceptthat the first TFTs 105 c are not connected to the pixel electrodes 111.The inspection circuit 106 includes second TFTs 106 a. The second TFTs106 a have the same configuration as that of the current TFTs 123 exceptthat the second TFTs 106 a are not connected to the pixel electrodes111.

As shown in FIG. 3, the scanning line-driving circuit control signallines 105 a are each disposed at corresponding areas that are eachlocated outside the corresponding scanning driving circuits 105 andlocated on the base-protecting layer 281. Furthermore, the scanningline-driving circuit power-supply lines 105 b are each disposed atcorresponding areas outside the corresponding scanning line-drivingcircuit control signal lines 105 a and located on the secondinterlayer-insulating layer 283. As shown in FIG. 4, theinspection-circuit control signal line 106 b is disposed at an area thatis located on the left side of the inspection circuit 106 and located onthe base-protecting layer 281. Furthermore, the inspection-circuitpower-supply line 106 c is disposed at an area that is located on theleft side of the inspection-circuit control signal line 106 b andlocated on the second interlayer-insulating layer 283. The luminescentpower-supply lines 103 are disposed outside the regions where thescanning line-driving circuit power-supply lines 105 b are disposed. Theluminescent power-supply lines 103 have a dual wiring structureconsisting of two-types of wiring lines and are arranged outside thedisplay pixel section 3. Such a dual wiring structure provides lowresistance.

For example, one of the red luminescent power-supply lines 103R disposedat a left area of FIG. 3 includes a first red line 103R₁ disposed on thebase-protecting layer 281 and a second red line 103R₂ disposed above thefirst red line 103R₁ with the second interlayer-insulating layer 283disposed therebetween. As shown in FIG. 2, the first red line 103R₁ isconnected to the second red line 103R₂ with a contact hole 103R₃extending through the second interlayer-insulating layer 283. The firstred line 103R₁ and the first cathode line 12 a are disposed on the samelayer and the second interlayer-insulating layer 283 lies between thefirst red line 103R₁ and the first cathode line 12 a. As shown in FIGS.3 and 4, the first cathode line 12 a is electrically connected to asecond cathode line 12 b, disposed on the second interlayer-insulatinglayer 283, with a contact hole. That is, the first cathode line 12 aalso has a dual wiring structure. The second red line 103R₂ and thesecond cathode line 12 b are disposed on the same layer and the firstinterlayer-insulating layer 284 lies between the second red line 103R₂and the second cathode line 12 b. Such a configuration provides secondcapacitors C₂ that are each disposed between the first red line 103R₁and the first cathode line 12 a and also disposed between the second redline 103R₂ and the second cathode line 12 b.

The green and blue luminescent power-supply lines 103G and 103B alsohave a dual wiring structure. The green and blue luminescentpower-supply lines 103G and 103B each include a first green line 103G₁and a first blue line 103B₁, respectively, both disposed on thebase-protecting layer 281 and also each include a second green line103G₂ and a second blue line 103B₂, respectively, both disposed on thesecond interlayer-insulating layer 283. As shown in FIGS. 2 and 3, thefirst green line 103G₁ is connected to the second green line 103G₂ witha green contact hole 103G₃ extending through the secondinterlayer-insulating layer 283, and the first blue line 103B₁ isconnected to the second blue line 103B₂ with a blue contact hole 103B₃extending through the second interlayer-insulating layer 283. The secondcapacitors C₂ are each disposed between the first blue line 103B₁ andthe first cathode line 12 a and also disposed between the second blueline 103B₂ and the second cathode line 12 b.

The distance between the first and second red lines 103R₁ and 103R₂ ispreferably 0.6 to 1.0 μm. When the distance is smaller than 0.6 μm, theparasitic capacitance between source lines and gate lines, as well asthe signal lines 102 and the scanning lines 101, having differentpotentials is increased, which is not preferable. For example, in theactual display region 4, there are many crossover sites of the sourcelines and gate lines. Therefore, there is a problem in that the delay ofdata signals is caused due to a large parasitic capacitance. Thus, thedata signals cannot be written in the pixel electrodes 111 in apredetermined period, thereby causing low contrast. The secondinterlayer-insulating layer 283 disposed between the first and secondred luminescent power-supply lines 103R₁ and 103R₂ preferably includesSiO₂ or the like. When the second interlayer-insulating layer 283 has athickness of 1.0 μm or more, there is a problem in that the substrate 2cracks due to the stress of SiO₂.

As shown in FIG. 4, the luminescent power-supply lines 103 has a dualwiring structure. The area of each luminescent power-supply line 103 isherein defined as the area of a line (for example, each second red line103R₂, second green line 103G₂, or second blue line 103B₂) included inthe dual wiring structure.

The cathode 12 extending from the display pixel section 3 is disposedabove the red luminescent power-supply lines 103R. That is, the secondred lines 103R₂ of the red luminescent power-supply lines 103R face thecathode 12, with the first interlayer-insulating layer 284 disposedtherebetween. Such a configuration discloses each of the firstcapacitors C, between the cathode 12 and the corresponding second redlines 103R₂.

The distance between the second red lines 103R₂ and the cathode 12 ispreferably, for example, 0.6 to 1.0 μm. When the distance is smallerthan 0.6 μm, the parasitic capacitance between pixel electrodes andsource lines having different potentials is increased, thereby the delayof data signals in signal lines including the source lines. Thus, thedata signals cannot be written in a predetermined period, therebycausing low contrast. The first interlayer-insulating layer 284 disposedbetween the second red luminescent power-supply lines 103R₂ and thecathode 12 preferably comprises SiO₂, an acrylic resin, or the like.When the first interlayer-insulating layer 284 includes SiO₂ and has athickness of 1.0 μm or more, there is a problem in that the substrate 2cracks due to the stress of SiO₂. When the first interlayer-insulatinglayer 284 includes such an acrylic resin, the firstinterlayer-insulating layer 284 may have a thickness of about 2.0 μm.However, since the acrylic resin expands when it contains moisture,there is a problem in that pixel electrodes formed on the firstinterlayer-insulating layer 284 crack.

As described above, in the electro-optical device 1 of the presentinvention, since the first capacitors C, are each disposed between thecorresponding luminescent power-supply lines 103 and the cathode 12,charges stored in the first capacitors C, are supplied to theluminescent power-supply lines 103 when the potential of currentsflowing in the luminescent power-supply lines 103 fluctuates. That is,the charges compensate for potential shortfalls of driving currents,thereby reducing the potential fluctuation. Thus, the image display ofthe electro-optical device 1 can be normally maintained. In particular,since the luminescent power-supply lines 103 extend along the cathode 12disposed outside the display pixel section 3, the distance between theluminescent power-supply lines 103 and the cathode 12 can be reducedsuch that charges stored in the first capacitors C, are decreased,thereby reducing the potential fluctuation. Thus, a stable image can bedisplayed. Furthermore, the luminescent power-supply lines 103 each havea dual wiring structure including first and second wiring lines and thesecond capacitors C₂ are each disposed between the corresponding firstwiring lines and the corresponding cathode lines, charges stored in thesecond capacitors C₂ are also supplied to the luminescent power-supplylines 103, thereby further reducing the potential fluctuation. Thus, theimage display of the electro-optical device 1 can be normallymaintained.

A configuration of the circuit section 11 including the current TFTs 123is described in detail below. FIG. 5 is a sectional view showing a mainpart of the pixel electrode cluster region 11 a. As shown in FIG. 5, thebase-protecting layer 281 containing SiO₂ as a main component isdisposed on the substrate 2 and first silicon layers 241 are arranged onthe base-protecting layer 281 in a dotted manner. The first siliconlayers 241 and the base-protecting layer 281 are covered with agate-insulating layer 282 containing SiO₂ and/or SiN as a maincomponent. First gate electrodes 242 are arranged above first siliconlayers 241 with the gate-insulating layer 282 disposed therebetween.

A sectional configuration of each current TFT 123 is shown FIG. 5. Eachswitching TFT 112 has the same configuration as that of the current TFT123. The first gate electrodes 242 and the gate-insulating layer 282 arecovered with the second interlayer-insulating layer 283 containing SiO₂as a main component. The term “main component” is herein defined as acomponent having the highest content.

Each first silicon layer 241 includes a channel region 241 a facing eachfirst gate electrode 242, with the gate-insulating layer 282 disposedtherebetween. In each first silicon layer 241, a first lightly dopedsource region 241 b and a first heavily doped source region 241S aredisposed on the right side of the channel region 241 a in that order.Furthermore, a first lightly doped drain region 241 c and a firstheavily doped drain region 241D are disposed on the left side of thechannel region 241 a in that order. These regions form a so-calledlightly doped drain (LDD) structure. The first silicon layers 241 is amain component of each current TFT 123.

The first heavily doped source region 241S is connected to each firstsource electrode 243 with each first contact hole 244 extending throughthe gate-insulating layer 282 and the second interlayer-insulating layer283. The first source electrode 243 is a component of each signal line102 described above. On the other hand, the first heavily doped drainregion 241D is connected to each first drain electrode 245, disposed inthe same layer as that of the source electrode 243, with each secondcontact hole 246 extending through the gate-insulating layer 282 and thesecond interlayer-insulating layer 283.

The first interlayer-insulating layer 284 is disposed on the secondinterlayer-insulating layer 283 having the first source electrode 243and the first drain electrode 245 thereon. Each transparent pixelelectrode 111 comprising ITO and so on is disposed on the firstinterlayer-insulating layer 284 and connected to the first drainelectrode 245 with each third contact hole 11 a extending through thefirst interlayer-insulating layer 284. That is, the pixel electrode 111is connected to the first heavily doped drain region 241D of the firstsilicon layer 241 with the first drain electrode 245. As shown in FIG.3, the pixel electrodes 111 are arranged in an area corresponding to theactual display region 4 and dummy pixel electrodes 111′ are arranged inan area corresponding to the dummy display region 5. The dummy pixelelectrodes 111′ have substantially the same configuration as that of thepixel electrodes 111 except that each dummy pixel electrode 111′ is notconnected to the first heavily doped drain region 241D.

The light-emitting layers 110 and a bank portion 122 are disposed in theactual display region 4 of the display pixel section 3. As shown inFIGS. 3 to 5, the light-emitting layers 110 are each placed on thecorresponding pixel electrodes 111. The bank portion 122 is disposedbetween pairs of the pixel electrodes 111 and the light-emitting layers110, thereby separating the light-emitting layers 110. The bank portion122 includes an inorganic bank layer 122 a, disposed at a position closeto the substrate 2, and an organic bank layer 122 b, disposed at aposition far from the substrate 2. The organic bank layer 112 b isdisposed on the inorganic bank layer 112 a. A light-shielding layer maybe placed between the inorganic bank layer 122 a and the organic banklayer 122 b.

Part of the inorganic bank layer 122 a and part of the organic banklayer 122 b are disposed on the periphery of each pixel electrode 111 inthat order. The inorganic bank layer 122 a extends to a position closerto the center of the circuit section 11 as compared with the organicbank layer 122 b. The inorganic bank layer 122 a preferably includes aninorganic material, such as SiO₂, TiO₂, or SiN. The inorganic bank layer122 a preferably has a thickness of 50 to 200 nm, and more preferablyabout 150 nm. When the thickness is smaller than 50 nm, the inorganicbank layer 122 a is thinner than each hole injection/transport layerdescribed below and therefore the flatness of the holeinjection/transport layer cannot be achieved. When the thickness islarger than 200 nm, a step due to the inorganic bank layer 122 a has alarge height and therefore the flatness of each light-emitting layer 110lying on the hole injection/transport layer cannot be achieved.

The organic bank layer 122 b includes an ordinary resist material, suchas an acrylic resin or a polyimide resin. The organic bank layer 122 bpreferably has a thickness of 0.1 to 3.5 μm, and more preferably about 2μm. When the thickness is smaller than 0.1 μm, the total of the holeinjection/transport layer thickness and the light-emitting layer 110thickness exceeds the thickness of the organic bank layer 122 b, therebycausing a problem in that a material contained in the light-emittinglayer 110 extends out of the upper opening. When the thickness is largerthan 3.5 μm, a step disposed at the upper opening has a large height andtherefore the step coverage of the cathode 12 disposed on the organicbank layer 122 b cannot be sufficiently achieved. When the thickness isabout 2 μm, the cathode 12 can be securely insulated from the pixelelectrode 111. Thus, the light-emitting layer 110 has a thicknesssmaller than that of the bank portion 122.

The bank portion 122 has lyophilic regions and lyophobic regions. Thelyophilic regions are disposed on the inorganic bank layer 122 a and thepixel electrodes 111. Lyophilic groups, such as hydroxyl groups, formedby plasma treatment using oxygen as reactive gas are disposed in theseregions. The lyophobic regions are disposed on the organic bank layer122 b. Lyophobic groups, such as fluorine groups, formed by plasmatreatment using tetrafluoromethane as reactive gas are disposed in theseregions.

As shown in FIG. 5, the light-emitting layers 110 are each disposed oncorresponding hole injection/transport layers 110 a, each being disposedon the corresponding pixel electrodes 111. A configuration includingeach light-emitting layer 110 and each hole injection/transport layer110 a is herein defined as a functional layer, and a configurationincluding each pixel electrode 111, the functional layer, and thecathode 12 is herein defined as an light-emitting element. The holeinjection/transport layer 110 a has a function of injecting holes to thelight-emitting layer 110 and also has a function of transport holes inthe hole injection/transport layer 110 a. Since the holeinjection/transport layer 110 a is disposed between the pixel electrode111 and the light-emitting layer 110, the light-emitting layer 110 hasenhanced element properties, such as light-emitting efficiency and life.In the light-emitting layer 110, fluorescence occurs when holes injectedfrom the hole injection/transport layer 110 a combine with electronssupplied from the cathode 12 combine. The light-emitting layers 110include three types of layers: a red light-emitting layer to emit redlight, a green light-emitting layer to emit green light, and a bluelight-emitting layer to emit blue light. As shown in FIGS. 1 and 2,these layers are arranged in a striped pattern.

As shown in FIGS. 3 and 4, the dummy region 5 of the display pixelsection 3 includes dummy light-emitting layers 210 and a dummy bankportion 212. The dummy bank portion 212 includes a dummy inorganic banklayer 212 a disposed at a position close to the substrate 2, and a dummyorganic bank layer 212 b disposed at a position far from the substrate2. The dummy organic bank layer 212 b is disposed on the dummy inorganicbank layer 212 a. The dummy inorganic bank layer 212 a is disposed overthe dummy pixel electrodes 111′. The dummy organic bank layer 212 b isdisposed between the pixel electrodes 111 in the same manner as that ofthe organic bank layer 122 b. The dummy light-emitting layers 210 areeach arranged above the corresponding dummy pixel electrodes 111′, withthe dummy inorganic bank layer 212 a disposed therebetween.

The dummy inorganic bank layer 212 a includes the same material and havethe same thickness as the material and thickness of the inorganic banklayer 122 a described above, and the dummy organic bank layer 212 bincludes the same material and have the same thickness as the materialand thickness of the organic bank layer 122 b described above. The dummylight-emitting layers 210 are each disposed on corresponding dummy holeinjection/transport layers, which are not shown. The dummy holeinjection/transport layers have substantially the same configuration asthat of the hole injection/transport layers 110 a, and the dummylight-emitting layers 210 have substantially the same configuration asthat of the light-emitting layers 110. Thus, the dummy light-emittinglayers 210, as well as the light-emitting layers 110, have a thicknesssmaller than that of the dummy bank portion 212.

Since the dummy region 5 is placed around the actual display region 4,the light-emitting layers 110 of the actual display region 4 have auniform thickness, thereby reducing or preventing uneven display. Thatis, since the dummy region 5 is placed, an ejected ink composition canbe dried under the same condition in the actual display region 4 whenthe display elements are formed by an inkjet process. Thereby, thelight-emitting layers 110 disposed at the periphery of the actualdisplay region 4 have substantially the same thickness as that of theother light-emitting layers 110.

The cathode 12 extends across the actual display region 4 and the dummyregion 5 and further extends to positions above the substrate 2, thepositions being disposed outside the dummy region 5. At the outside ofthe dummy region 5, that is, at the outside of the display pixel section3, the cathode 12 is directly disposed above the luminescentpower-supply lines 103. The periphery of the cathode 12 is in contactwith substantially the entire first cathode line 12 a. The cathode 12acts as a counter electrode for the pixel electrodes 111 and has afunction of transmitting currents to the light-emitting layers 110. Thecathode 12 includes a cathode layer 12 b including a lithium fluoridesub-layer and a calcium sub-layer and also includes a reflective layer12 c, the reflective layer 12 c being disposed on the cathode layer 12b. In the cathode 12, only the reflective layer 12 c extends outside thedisplay pixel section 3. The reflective layer 12 c has a function ofreflecting light, emitted from the light-emitting layers 110, in thedirection of the substrate 2 and preferably includes, for example, Al,Ag, or an Mg/Ag layered structure. A protective layer, including SiO₂,SiN, or the like, to reduce or prevent oxidation may be placed on thereflective layer 12 c.

A method for manufacturing the electro-optical device 1 of the exemplaryembodiment of the present invention is described below. FIGS. 6( a) to9(c) are illustrations showing steps of manufacturing theelectro-optical device 1. A procedure for forming the circuit section 11on the substrate 2 is described below with reference to FIGS. 6( a) to8(c). FIGS. 6( a) to 8(c) are sectional views taken along plane A-A′ ofFIG. 2. In the following description, the impurity concentrationdetermined after activation annealing is used.

As shown in FIG. 6( a), the base-protecting layer 281 including siliconoxide or the like is formed on the substrate 2. An amorphous siliconlayer is formed thereon by an ICVD process, a plasma CVD process, or thelike. Crystal grains in the amorphous silicon layer is grown by a laserannealing process or a rapid heating process, thereby converting theamorphous silicon layer into a polysilicon layer 501. The polysiliconlayer 501 is patterned by a photolithographic process such that thefirst silicon layers 241 and second and third silicon layers 251 and 261are formed in a dotted manner, as shown in FIG. 6( b). Thegate-insulating layer 282 comprising silicon oxide is then formedthereon.

Each first silicon layer 241 is a component of each current TFT 123(hereinafter “pixel TFT” in some cases) that is disposed below theactual display region 4 and connected to each pixel electrode 111. Eachsecond silicon layer 241 is a component of each p-channel type TFT andeach third silicon layer 261 is a component of each n-channel type TFT.These TFTs are included in the scanning driving circuits 105 and arehereinafter referred to as “driving circuit TFTs” in some cases.

The gate-insulating layer 282 is formed by a plasma CVD process, athermal oxidation process, or the like such that the gate-insulatinglayer 282 covers the base-protecting layer 281 and the first, second,and third silicon layers 241, 251, and 261 and has a thickness of about30 to 200 nm. The gate-insulating layer 282 includes silicon oxide. Ifthe gate-insulating layer 282 is formed by a thermal oxidation process,the first, second, and third silicon layers 241, 251, and 261 can becrystallized, thereby converting these silicon layers into polysiliconlayers. In order to perform channel doping, for example, boron ions areimplanted at a dose of about 1×10¹² cm⁻² during the above process.Thereby, the first, second, and third silicon layers 241, 251, and 261are converted into lightly doped p-type silicon layers having animpurity concentration of about 1×10⁻¹⁷ cm⁻³.

As shown in FIG. 6( c), first ion-implanting selection masks M₁ each areformed on corresponding portions of the first and third silicon layers241 and 261 and phosphorus ions are then implanted at a dose of about1×10^(15 cm) ⁻². As a result, a large amount of dopants are introducedinto the silicon layers in such a manner that the dopants areself-aligned with respect to the ion-implanting selection masks M₁.Thereby, the first heavily doped source region 241S and the firstheavily doped drain region 241D are formed in each first silicon layer241, and a third heavily doped source region 261S and a third heavilydoped drain region 261D are formed in each third silicon layer 261.

As shown in FIG. 6( d), after the ion-implanting selection masks M₁ areremoved, doped silicon layers, silicide layers, or metal layers, such asaluminum layers, chromium layers, or tantalum layers are formed on thegate-insulating layer 282 such that the layers have a thickness of about200 nm. The layers are then patterned, thereby forming the first gateelectrodes 242 of pixel TFTs, second gate electrodes 252 of p-channeltype TFTs for driving circuits, and third gate electrodes 262 ofn-channel type TFTs for the driving circuits. During the patterningstep, the following lines are simultaneously formed: the scanningline-driving circuit control signal lines 105 a, the first red, green,and blue lines 103R₁, 103G₁, and 103B₁ of the luminescent power-supplylines 103, and a portion of the first cathode line 12 a.

Phosphorus ions are then implanted in the first, second, and thirdsilicon layers 241, 251, and 261 at a dose of about 4×10¹³ cm⁻² usingthe first, second, and third gate electrodes 242, 252, and 262 as masks.As a result, a small amount of dopants are introduced into the siliconlayers in such a manner that the dopants are self-aligned with respectto the first, second, and third gate electrodes 242, 252, and 262.Thereby, as shown in FIG. 6( d), the first lightly doped source region241 b and the first lightly doped drain region 241 c are formed in eachfirst silicon layer 241, a third lightly doped source region 261 b and athird lightly doped drain region 261 c are formed in each third siliconlayer 261. Furthermore, a second lightly doped source region 251S and asecond lightly doped drain region 251D are formed in each second siliconlayer 251.

As shown in FIG. 7( a), a second ion-implanting selection mask M₂ isformed over the substrate 2 other than the vicinities of the second gateelectrodes 252. Boron ions are then implanted in the second siliconlayers 251 at a dose of about 1.5×10¹⁵ cm⁻² using the secondion-implanting selection mask M₂. The second gate electrodes 252 alsofunction as masks, whereby the second silicon layers 251 are heavilydoped with dopants in a self-aligned manner. Thereby, the second lightlydoped source regions 251S and the second lightly doped drain regions251D are counter-doped. As a result, each second lightly doped sourceregion 251S and second lightly doped drain region 251D function as asource region and drain region, respectively, of each p-channel type TFTfor the driving circuits.

As shown in FIG. 7( b), after the second ion-implanting selection maskM₂ is removed, the second interlayer-insulating layer 283 is formed overthe substrate 2. The second interlayer-insulating layer 283 is thenlithographically patterned to form first openings H₁ for forming contactholes at positions corresponding to the first cathode line 12 a and thesource and drain electrodes of the TFTs. As shown in FIG. 7( c), aconductive layer 504 containing metal, such as aluminum, chromium, ortantalum and having a thickness of about 200 to 800 nm is formed overthe second interlayer-insulating layer 283, thereby packing the metalinto the first openings H₁ to form contact holes. Patterning masks M₃are then formed on the conductive layer 504.

As shown in FIG. 8( a), the conductive layer 504 is patterned using thepatterning masks M₃ to form the first source electrodes 243 and secondand third source electrodes 253 and 263 of the TFTs; metal portionspacked into the first contact holes 244 and second and third contactholes 245 and 246; the second red, green, and blue lines 103R₂, 103G₂,and 103B₂ of the luminescent power-supply lines 103; the scanningline-driving circuit power-supply lines 105 b; and the second cathodeline 12 b.

According to the above configuration, the first red and blue lines 103R₁and 103B₁ and the first cathode line 12 a are arranged on the same layerin a separated manner, whereby the second capacitors C₂ are formed.

After the above steps, as shown in FIG. 8( b), the firstinterlayer-insulating layer 284 including, for example, a resinmaterial, such as an acrylic material, is formed over the secondinterlayer-insulating layer 283. The first interlayer-insulating layer284 preferably has a thickness of about 1 to 2 μm. As shown in FIG. 8(c), in the first interlayer-insulating layer 284, portions correspondingto the first contact holes 244 are removed by an etching process to formsecond openings H₂ to form contact holes. In this procedure, a portionof the first interlayer-insulating layer 284 corresponding to the firstcathode line 12 a is also removed. Thereby, the circuit section 11 isformed on the substrate 2.

With reference to FIGS. 9( a)-9(c), the following procedure isdescribed. The display pixel section 3 is formed on the circuit section11 to obtain the electro-optical device 1. FIGS. 9( a)-9(c) aresectional views taken along plane A-A′ of FIG. 2. As shown in FIG. 9(a), a thin-film including a transparent electrode material, such as ITO,is formed over the substrate 2, thereby packing such a material into thesecond openings H₂, disposed in the first interlayer-insulating layer284, to form the third contact holes 111 a. The formed thin-film is thenpatterned, whereby the pixel electrodes 111 and the dummy pixelelectrodes 111′ are formed. The pixel electrodes 111 are formed only inan area for forming the current TFTs 123 (switching elements) and areeach connected to the current TFTs 123 with the third contact holes 111a. The dummy pixel electrodes 111′ are arranged in a dotted manner.

As shown in FIG. 9( b), the inorganic bank layer 122 a and the dummyinorganic bank layer 212 a are formed over the firstinterlayer-insulating layer 284, the pixel electrodes 111, and the dummypixel electrode 111′. The inorganic bank layer 122 a has openingscorresponding to the pixel electrodes 111 and the dummy inorganic banklayer 212 a completely covers the dummy pixel electrode 111′. Theinorganic bank layer 122 a and the dummy inorganic bank layer 212 a areformed according to the following procedure. An inorganic layercontaining SiO₂, TiO₂, SiN, or the like are formed over the firstinterlayer-insulating layer 284 and the pixel electrodes 111, and theformed inorganic layer is then patterned.

Furthermore, as shown in FIG. 9( b), the organic bank layer 122 b andthe dummy organic bank layer 212 b are formed on the inorganic banklayer 122 a and the dummy inorganic bank layer 212 a, respectively. Theorganic bank layer 122 b disposed on the inorganic bank layer 122 a hasopenings corresponding to the pixel electrodes 111 and the dummy organicbank layer 212 b has openings from which parts of the dummy inorganicbank layer 212 a appear. According to the above procedure, the bankportion 122 is formed on the first interlayer-insulating layer 284.

The lyophilic regions and the lyophobic regions are formed on the bankportion 122. In this exemplary embodiment, these regions are formed by aplasma-treating process. In particular, the plasma-treating processincludes at least a lyophilicity-providing step of rendering the pixelelectrodes 111, the inorganic bank layer 122 a, and the dummy inorganicbank layer 212 a lyophilic and a lyophobicity-providing step ofrendering the organic bank layer 122 b and the dummy organic bank layer212 b lyophobic.

Lyophilicity and lyophobicity are provided to predetermined regionsaccording to the following procedure: the bank portion 122 is heated toa predetermined temperature (for example, about 70 to 80° C.); firstplasma treatment (O₂ plasma treatment) using oxygen as reactive gas isperformed in the atmosphere in the lyophilicity-providing step; secondplasma treatment (CF₄ plasma treatment) using tetrafluoromethane asreactive gas is performed in the atmosphere in thelyophobicity-providing step; and the bank portion 122 heated for plasmatreatment is then cooled to room temperature.

The light-emitting layers 110 are formed on the corresponding pixelelectrodes 111 and the dummy light-emitting layers 210 are formed oncorresponding potions of the dummy inorganic bank layer 112 a by aninkjet process. The light-emitting layers 110 and the dummylight-emitting layers 210 are formed according to the followingprocedure. An ink composition containing a hole injection/transportmaterial is discharged onto predetermined portions and then dried, andanother ink composition containing a light-emitting material isdischarged onto the portions and then dried. After the light-emittinglayers 110 and the dummy light-emitting layers 210 are formed, in orderto reduce or prevent the hole injection/transport material and thelight-emitting material from being oxidized, subsequent steps arepreferably performed in an inert gas atmosphere such as a nitrogenatmosphere or an argon atmosphere.

As shown in FIG. 9( c), the cathode 12 covers the bank portion 122, thelight-emitting layers 110, and the dummy light-emitting layers 210. Thecathode 12 is formed according to the following procedure. The cathodelayer 12 b is formed over the bank portion 122, the light-emittinglayers 110, and the dummy light-emitting layers 210, and the reflectivelayer 12 c connected to the first cathode line 12 a disposed above thesubstrate 2 is formed over the cathode layer 12 b. Therefore, thereflective layer 12 c extends from the display pixel section 3 topositions above the substrate 2 such that the reflective layer 12 c isconnected to the first cathode line 12 a, and the reflective layer 12 cis disposed directly above the luminescent power-supply lines 103, withthe first interlayer-insulating layer 284 disposed therebetween. Such aconfiguration provides the first capacitors C₁ such that each isdisposed between the corresponding luminescent power-supply lines 103and the reflective layer 12 c, that is, the cathode 12. Finally, thesealing member 13 including an epoxy resin or the like is provided onthe substrate 2 and the sealing substrate 14 is joined to the substrate2 with the sealing member 13 disposed therebetween. According to theabove procedure, the electro-optical device 1 shown in FIGS. 1 to 4 iscompleted.

For example, a notebook-type personal computer (electronic apparatus)600 shown in FIG. 10 is manufactured by installing electroniccomponents, such as an electro-optical device manufactured according tothe above procedure, a motherboard including a central processing unit(CPU), a keyboard, and a hard disk, in a casing. FIG. 10 is a schematicperspective view showing an exemplary electronic apparatus including anelectro-optical device according to an exemplary embodiment of thepresent invention. In FIG. 10, reference numeral 601 represents acasing, reference numeral 602 represents a liquid crystal display, andreference numeral 603 represents a keyboard. FIG. 11 is a schematicperspective view showing a mobile phone for illustrating anotherexemplary electronic apparatus. In FIG. 11, reference numeral 700represents the mobile phone, reference numeral 701 represents anantenna, reference numeral 702 represents a receiver, reference numeral703 represents a microphone, reference numeral 704 represents a liquidcrystal display, and reference numeral 705 represents an operatingbutton section.

In the above description, the notebook-type personal computer 600 andthe mobile phone 700 are illustrated as electronic apparatuses. However,the present invention is not limited to such apparatuses and coversother electronic apparatuses, such as liquid crystal projectors,multimedia personal computers (PCs), multimedia engineering workstations (EWSs), pagers, word processors, televisions, viewfinder-typeor direct view-type video tape recorders, electronic notebooks, portableelectronic calculators, car navigation systems, POS terminals, and touchpanel-including apparatus, for example.

[Advantages]

As described above, according to the present invention, a cathode linehas an area larger than that of each power-supply line such that thecathode line has a small wiring resistance. Therefore, there is anadvantage in that the voltage drop can be reduced. Thus, there is alsoan advantage in that steady image signals can be transmitted, therebyreducing or preventing erroneous image display, such as low contrast.

1. An electro-optical device, comprising: a substrate; first electrodesdisposed in an effective region on the substrate; a second electrodecommonly formed to oppose the first electrodes; electro-opticalelements, each of the electro-optical elements being interposed betweenthe opposing one of the first electrodes and the second electrode; afirst wiring line electrically coupled to at least one of the firstelectrodes; and a second wiring line coupled to the second electrode,the first wiring line including a first portion and a second portion,the first portion being disposed between the substrate and the secondportion.
 2. The electro-optical device as set forth in claim 1, thefirst portion and second portion being formed in an overlapping positionin a plan view.
 3. The electro-optical device as set forth in claim 1,further comprising: an insulating layer being formed between the firstportion and the second portion, the first portion and second portionbeing electrically coupled through at least one contact hole in theinsulating layer.
 4. The electro-optical device as set forth in claim 1,the first portion and the second portion being spaced apart by adistance in the approximate range of 0.6 to 1.0 μm.